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PTB20176 NPN Transistor

The PTB20176 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20176 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20176 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20176 transistor as follows.

Circuit diagram symbol of the PTB20176 transistor

PTB20176 Transistor Specification

Transistor Code PTB20176
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package M118
Collector Power Dissipation (Maximum) PC 21W
Collector-Base Voltage (Maximum) VCB 45V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 1700MHz
Collector Capacitance CC 7pF

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More Transistors Datasheets in M118 Package

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