PTB20169 NPN Transistor

The PTB20169 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20169 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20169 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20169 transistor as follows.

PTB20169 Transistor Specification

Transistor Code		PTB20169
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		20227
Collector Power Dissipation (Maximum)	PC	33W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	55V
Collector Current (Maximum)	IC	2.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	915MHz
Collector Capacitance	CC	60pF

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