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PTB20156 NPN Transistor

The PTB20156 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20156 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20156 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20156 transistor as follows.

Circuit diagram symbol of the PTB20156 transistor

PTB20156 Transistor Specification

Transistor Code PTB20156
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 20209
Collector Power Dissipation (Maximum) PC 52W
Collector-Base Voltage (Maximum) VCB 50V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 1300MHz
Collector Capacitance CC 10pF

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More Transistors Datasheets in 20209 Package

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