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PTB20152 NPN Transistor

The PTB20152 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20152 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20152 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20152 transistor as follows.

Circuit diagram symbol of the PTB20152 transistor

PTB20152 Transistor Specification

Transistor Code PTB20152
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 20208
Collector Power Dissipation (Maximum) PC 32.4W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 340MHz

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More Transistors Datasheets in 20208 Package

PTB20144 PTB20144 NPN Transistor PTB20145 PTB20145 NPN Transistor PTB20146 PTB20146 NPN Transistor PTB20147 PTB20147 NPN Transistor