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PTB20151 NPN Transistor

The PTB20151 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20151 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20151 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20151 transistor as follows.

Circuit diagram symbol of the PTB20151 transistor

PTB20151 Transistor Specification

Transistor Code PTB20151
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 20223
Transistor SMD Code 20151
Collector Power Dissipation (Maximum) PC 200W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 7.7A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 1800MHz

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More Transistors Datasheets in 20223 Package

E20182 E20182 NPN Transistor PTB20193 PTB20193 NPN Transistor PTB20173 PTB20173 NPN Transistor PTB20175 PTB20175 NPN Transistor