PTB20148 NPN Transistor

The PTB20148 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20148 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20148 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20148 transistor as follows.

PTB20148 Transistor Specification

Transistor Code		PTB20148
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		M169
Collector Power Dissipation (Maximum)	PC	145W
Collector-Base Voltage (Maximum)	VCB	65V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	925MHz

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