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PTB20145 NPN Transistor

The PTB20145 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20145 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20145 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20145 transistor as follows.

Circuit diagram symbol of the PTB20145 transistor

PTB20145 Transistor Specification

Transistor Code PTB20145
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 20208
Collector Power Dissipation (Maximum) PC 33W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 55V
Collector Current (Maximum) IC 2.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 915MHz

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More Transistors Datasheets in 20208 Package

PTB20146 PTB20146 NPN Transistor PTB20144 PTB20144 NPN Transistor PTB20152 PTB20152 NPN Transistor PTB20147 PTB20147 NPN Transistor