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PTB20125 NPN Transistor

The PTB20125 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20125 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20125 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20125 transistor as follows.

Circuit diagram symbol of the PTB20125 transistor

PTB20125 Transistor Specification

Transistor Code PTB20125
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 20225
Collector Power Dissipation (Maximum) PC 400W
Collector-Base Voltage (Maximum) VCB 55V
Collector-Emitter Voltage (Maximum) VCE 55V
Collector Current (Maximum) IC 14A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 1800MHz

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More Transistors Datasheets in 20225 Package

E20235 E20235 NPN Transistor PTB20202 PTB20202 NPN Transistor