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PTB20111 NPN Transistor

The PTB20111 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20111 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20111 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20111 transistor as follows.

Circuit diagram symbol of the PTB20111 transistor

PTB20111 Transistor Specification

Transistor Code PTB20111
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 20216
Transistor SMD Code 20111
Collector Power Dissipation (Maximum) PC 159W
Collector-Base Voltage (Maximum) VCB 65V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 860MHz

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More Transistors Datasheets in 20216 Package

PTB20135 PTB20135 NPN Transistor PTB20219 PTB20219 NPN Transistor