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PTB20082 NPN Transistor

The PTB20082 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20082 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20082 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20082 transistor as follows.

Circuit diagram symbol of the PTB20082 transistor

PTB20082 Transistor Specification

Transistor Code PTB20082
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 20209
Transistor SMD Code 20082
Collector Power Dissipation (Maximum) PC 52W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 1.4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 1800MHz

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