PTB20050 NPN Transistor

The PTB20050 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20050 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20050 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20050 transistor as follows.

PTB20050 Transistor Specification

Transistor Code		PTB20050
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		M118
Collector Power Dissipation (Maximum)	PC	11.8W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.7A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	1400MHz

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