PTB20009 NPN Transistor

The PTB20009 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PTB20009 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PTB20009 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PTB20009 transistor as follows.

PTB20009 Transistor Specification

Transistor Code		PTB20009
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		X115
Collector Power Dissipation (Maximum)	PC	13.5W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	1.7A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	935MHz

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