PNTET50V01 NPN Transistor

The PNTET50V01 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PNTET50V01 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PNTET50V01 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PNTET50V01 transistor as follows.

PNTET50V01 Transistor Specification

Transistor Code		PNTET50V01
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT523
Collector Power Dissipation (Maximum)	PC	0.125W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120

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