PMD12K80 NPN Transistor

The PMD12K80 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PMD12K80 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PMD12K80 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PMD12K80 transistor as follows.

PMD12K80 Transistor Specification

Transistor Code		PMD12K80
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		10000

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