PHPT61010NY NPN Transistor

The PHPT61010NY is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PHPT61010NY transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PHPT61010NY transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PHPT61010NY transistor as follows.

PHPT61010NY Transistor Specification

Transistor Code		PHPT61010NY
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT669
Transistor SMD Code		1010NAB
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	145MHz
Collector Capacitance	CC	40pF

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