PHPT60610NY NPN Transistor

The PHPT60610NY is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PHPT60610NY transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PHPT60610NY transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PHPT60610NY transistor as follows.

PHPT60610NY Transistor Specification

Transistor Code		PHPT60610NY
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT669
Transistor SMD Code		0610NAB
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	140MHz
Collector Capacitance	CC	50pF

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