The PH3134-65M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PH3134-65M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The PH3134-65M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the PH3134-65M transistor as follows.
Transistor Code | PH3134-65M | |
---|---|---|
Transistor Type | BJT | |
Transistor Polarity | NPN | |
Transistor Material | Silicon(SI) | |
Package | CERAMIC | |
Collector Power Dissipation (Maximum) | PC | 350W |
Collector-Emitter Voltage (Maximum) | VCE | 65V |
Collector Current (Maximum) | IC | 7.7A |
Operating Junction Temperature (Maximum) | TJ | 200°C |
Emitter-Base Voltage (Maximum) | VEB | 3V |
Forward Current Transfer Ratio (hFE Value) | 7.5 | |
Transition Frequency | FT | 3400MHz |
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