The PH2729-110M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PH2729-110M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The PH2729-110M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the PH2729-110M transistor as follows.
| Transistor Code | PH2729-110M | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | CERAMIC | |
| Collector Power Dissipation (Maximum) | PC | 330W |
| Collector-Emitter Voltage (Maximum) | VCE | 63V |
| Collector Current (Maximum) | IC | 8A |
| Operating Junction Temperature (Maximum) | TJ | 200°C |
| Emitter-Base Voltage (Maximum) | VEB | 3V |
| Forward Current Transfer Ratio (hFE Value) | 6.8 | |
| Transition Frequency | FT | 2900MHz |
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