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PH2226-110M NPN Transistor

The PH2226-110M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PH2226-110M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PH2226-110M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PH2226-110M transistor as follows.

Circuit diagram symbol of the PH2226-110M transistor

PH2226-110M Transistor Specification

Transistor Code PH2226-110M
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package CERAMIC
Collector Power Dissipation (Maximum) PC 583W
Collector-Emitter Voltage (Maximum) VCE 65V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 7.4
Transition Frequency FT 2550MHz

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