PH2226-110M NPN Transistor

The PH2226-110M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PH2226-110M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PH2226-110M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PH2226-110M transistor as follows.

PH2226-110M Transistor Specification

Transistor Code		PH2226-110M
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		CERAMIC
Collector Power Dissipation (Maximum)	PC	583W
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		7.4
Transition Frequency	FT	2550MHz

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