PH1214-55EL NPN Transistor

The PH1214-55EL is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PH1214-55EL transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PH1214-55EL transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PH1214-55EL transistor as follows.

PH1214-55EL Transistor Specification

Transistor Code		PH1214-55EL
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		CERAMIC
Collector Power Dissipation (Maximum)	PC	220W
Collector-Emitter Voltage (Maximum)	VCE	58V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		6.5
Transition Frequency	FT	1400MHz

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