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PBSS8510PA NPN Transistor

The PBSS8510PA is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS8510PA transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS8510PA transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS8510PA transistor as follows.

Circuit diagram symbol of the PBSS8510PA transistor

PBSS8510PA Transistor Specification

Transistor Code PBSS8510PA
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT1061
Transistor SMD Code AE
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 5.2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 180
Transition Frequency FT 95MHz
Collector Capacitance CC 20pF

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