PBSS8110Z NPN Transistor

The PBSS8110Z is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS8110Z transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS8110Z transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS8110Z transistor as follows.

PBSS8110Z Transistor Specification

Transistor Code		PBSS8110Z
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		PB8110
Collector Power Dissipation (Maximum)	PC	0.65W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	100MHz
Collector Capacitance	CC	7.5pF

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