PBSS5630PA PNP Transistor

The PBSS5630PA is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5630PA transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5630PA transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5630PA transistor as follows.

PBSS5630PA Transistor Specification

Transistor Code		PBSS5630PA
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT1061
Transistor SMD Code		AB
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		230
Transition Frequency	FT	50MHz
Collector Capacitance	CC	90pF

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