PBSS5612PA PNP Transistor

The PBSS5612PA is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5612PA transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5612PA transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5612PA transistor as follows.

PBSS5612PA Transistor Specification

Transistor Code		PBSS5612PA
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT1061
Transistor SMD Code		A9
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	12V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		220
Transition Frequency	FT	40MHz
Collector Capacitance	CC	175pF

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More Transistors Datasheets in SOT1061 Package

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