PBSS5580PA PNP Transistor

The PBSS5580PA is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5580PA transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5580PA transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5580PA transistor as follows.

PBSS5580PA Transistor Specification

Transistor Code		PBSS5580PA
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT1061
Transistor SMD Code		AF
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	70MHz
Collector Capacitance	CC	60pF

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