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PBSS5560PA PNP Transistor

The PBSS5560PA is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5560PA transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5560PA transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5560PA transistor as follows.

Circuit diagram symbol of the PBSS5560PA transistor

PBSS5560PA Transistor Specification

Transistor Code PBSS5560PA
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT1061
Transistor SMD Code AC
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 180
Transition Frequency FT 55MHz
Collector Capacitance CC 80pF

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More Transistors Datasheets in SOT1061 Package

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