PBSS5540Z PNP Transistor

The PBSS5540Z is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5540Z transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5540Z transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5540Z transistor as follows.

PBSS5540Z Transistor Specification

Transistor Code		PBSS5540Z
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		PB5540
Collector Power Dissipation (Maximum)	PC	1.35W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	60MHz
Collector Capacitance	CC	105pF

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