PBSS5540X PNP Transistor

The PBSS5540X is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5540X transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5540X transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5540X transistor as follows.

PBSS5540X Transistor Specification

Transistor Code		PBSS5540X
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		*1G
Collector Power Dissipation (Maximum)	PC	0.55W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	60MHz
Collector Capacitance	CC	105pF

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