PBSS5160V PNP Transistor

The PBSS5160V is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5160V transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5160V transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5160V transistor as follows.

PBSS5160V Transistor Specification

Transistor Code		PBSS5160V
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT666
Transistor SMD Code		51
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.9A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	150MHz
Collector Capacitance	CC	15pF

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