PBSS5160DS PNP Transistor

The PBSS5160DS is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5160DS transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5160DS transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5160DS transistor as follows.

PBSS5160DS Transistor Specification

Transistor Code		PBSS5160DS
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT457 SC74
Transistor SMD Code		A5
Collector Power Dissipation (Maximum)	PC	0.42W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.77A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	150MHz
Collector Capacitance	CC	15pF

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