PBSS5130T PNP Transistor

The PBSS5130T is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5130T transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5130T transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5130T transistor as follows.

PBSS5130T Transistor Specification

Transistor Code		PBSS5130T
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		*3E
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		300
Transition Frequency	FT	100MHz
Collector Capacitance	CC	28pF

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