PBSS5112PAP PNP Transistor

The PBSS5112PAP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5112PAP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5112PAP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5112PAP transistor as follows.

PBSS5112PAP Transistor Specification

Transistor Code		PBSS5112PAP
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-1118
Transistor SMD Code		2S
Collector Power Dissipation (Maximum)	PC	1.45W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	50MHz
Collector Capacitance	CC	9.5pF

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More Transistors Datasheets in SOT-1118 Package

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