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PBSS4560PA NPN Transistor

The PBSS4560PA is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS4560PA transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS4560PA transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS4560PA transistor as follows.

Circuit diagram symbol of the PBSS4560PA transistor

PBSS4560PA Transistor Specification

Transistor Code PBSS4560PA
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT1061
Transistor SMD Code A8
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 280
Transition Frequency FT 90MHz
Collector Capacitance CC 30pF

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