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PBSS4260PAN NPN Transistor

The PBSS4260PAN is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS4260PAN transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS4260PAN transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS4260PAN transistor as follows.

Circuit diagram symbol of the PBSS4260PAN transistor

PBSS4260PAN Transistor Specification

Transistor Code PBSS4260PAN
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-1118
Transistor SMD Code 2N
Collector Power Dissipation (Maximum) PC 1.45W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 70MHz
Collector Capacitance CC 6.5pF

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More Transistors Datasheets in SOT-1118 Package

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