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PBSS4160T NPN Transistor

The PBSS4160T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS4160T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS4160T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS4160T transistor as follows.

Circuit diagram symbol of the PBSS4160T transistor

PBSS4160T Transistor Specification

Transistor Code PBSS4160T
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code *U5
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 250
Transition Frequency FT 150MHz
Collector Capacitance CC 10pF

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