PBSS4112PAN NPN Transistor

The PBSS4112PAN is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS4112PAN transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS4112PAN transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS4112PAN transistor as follows.

PBSS4112PAN Transistor Specification

Transistor Code		PBSS4112PAN
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-1118
Transistor SMD Code		2R
Collector Power Dissipation (Maximum)	PC	1.45W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	60MHz
Collector Capacitance	CC	4.5pF

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