PBSS3540M PNP Transistor

The PBSS3540M is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS3540M transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS3540M transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS3540M transistor as follows.

PBSS3540M Transistor Specification

Transistor Code		PBSS3540M
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT883
Transistor SMD Code		DA
Collector Power Dissipation (Maximum)	PC	0.43W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	10pF

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