PBSS3515M PNP Transistor

The PBSS3515M is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS3515M transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS3515M transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS3515M transistor as follows.

PBSS3515M Transistor Specification

Transistor Code		PBSS3515M
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT883
Transistor SMD Code		DB
Collector Power Dissipation (Maximum)	PC	0.43W
Collector-Base Voltage (Maximum)	VCB	15V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	10pF

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