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PBSS3515E PNP Transistor

The PBSS3515E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS3515E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS3515E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS3515E transistor as follows.

Circuit diagram symbol of the PBSS3515E transistor

PBSS3515E Transistor Specification

Transistor Code PBSS3515E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT416 SC75
Transistor SMD Code 1R
Collector Power Dissipation (Maximum) PC 0.25W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 100MHz
Collector Capacitance CC 10pF

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More Transistors Datasheets in SOT416_SC75 Package

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