PBSS306NX NPN Transistor

The PBSS306NX is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS306NX transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS306NX transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS306NX transistor as follows.

PBSS306NX Transistor Specification

Transistor Code		PBSS306NX
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		*5G
Collector Power Dissipation (Maximum)	PC	2.1W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	4.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	110MHz
Collector Capacitance	CC	40pF

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