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PBSS2540MB NPN Transistor

The PBSS2540MB is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS2540MB transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS2540MB transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS2540MB transistor as follows.

Circuit diagram symbol of the PBSS2540MB transistor

PBSS2540MB Transistor Specification

Transistor Code PBSS2540MB
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-883B
Collector Power Dissipation (Maximum) PC 0.59W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 250MHz
Collector Capacitance CC 6pF

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More Transistors Datasheets in SOT-883B Package

PBSS3515MB PBSS3515MB PNP Transistor PBSS3540MB PBSS3540MB PNP Transistor