PBSS2515M NPN Transistor

The PBSS2515M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS2515M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS2515M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS2515M transistor as follows.

PBSS2515M Transistor Specification

Transistor Code		PBSS2515M
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT883
Transistor SMD Code		S2
Collector Power Dissipation (Maximum)	PC	0.43W
Collector-Base Voltage (Maximum)	VCB	15V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	250MHz
Collector Capacitance	CC	4.4pF

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