PBHV8560Z NPN Transistor

The PBHV8560Z is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBHV8560Z transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBHV8560Z transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBHV8560Z transistor as follows.

PBHV8560Z Transistor Specification

Transistor Code		PBHV8560Z
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-223
Transistor SMD Code		HV856Z
Collector Power Dissipation (Maximum)	PC	0.65W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		70
Collector Capacitance	CC	7.5pF

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