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PBHV8560Z NPN Transistor

The PBHV8560Z is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBHV8560Z transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBHV8560Z transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBHV8560Z transistor as follows.

Circuit diagram symbol of the PBHV8560Z transistor

PBHV8560Z Transistor Specification

Transistor Code PBHV8560Z
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-223
Transistor SMD Code HV856Z
Collector Power Dissipation (Maximum) PC 0.65W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 70
Collector Capacitance CC 7.5pF

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