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PBHV8540X NPN Transistor

The PBHV8540X is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBHV8540X transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBHV8540X transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBHV8540X transistor as follows.

Circuit diagram symbol of the PBHV8540X transistor

PBHV8540X Transistor Specification

Transistor Code PBHV8540X
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-89
Transistor SMD Code *4D
Collector Power Dissipation (Maximum) PC 0.52W
Collector-Base Voltage (Maximum) VCB 500V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 30MHz
Collector Capacitance CC 4pF

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