PBHV8140Z NPN Transistor

The PBHV8140Z is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBHV8140Z transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBHV8140Z transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBHV8140Z transistor as follows.

PBHV8140Z Transistor Specification

Transistor Code		PBHV8140Z
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		V8140Z
Collector Power Dissipation (Maximum)	PC	1.45W
Collector-Base Voltage (Maximum)	VCB	500V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	25MHz
Collector Capacitance	CC	12pF

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