PBHV8115Z NPN Transistor

The PBHV8115Z is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBHV8115Z transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBHV8115Z transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBHV8115Z transistor as follows.

PBHV8115Z Transistor Specification

Transistor Code		PBHV8115Z
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		V8115Z
Collector Power Dissipation (Maximum)	PC	0.7W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	30MHz
Collector Capacitance	CC	5.7pF

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