NTE266 NPN Transistor

The NTE266 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NTE266 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NTE266 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NTE266 transistor as follows.

NTE266 Transistor Specification

Transistor Code		NTE266
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	6.25W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.5A
Emitter-Base Voltage (Maximum)	VEB	13V
Forward Current Transfer Ratio (hFE Value)		40000

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