NTE2559 NPN Transistor

The NTE2559 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NTE2559 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NTE2559 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NTE2559 transistor as follows.

NTE2559 Transistor Specification

Transistor Code		NTE2559
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3-P
Collector Power Dissipation (Maximum)	PC	75W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	16A
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		2000

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