NTE2316 NPN Transistor

The NTE2316 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NTE2316 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NTE2316 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NTE2316 transistor as follows.

NTE2316 Transistor Specification

Transistor Code		NTE2316
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	120W
Collector-Base Voltage (Maximum)	VCB	500V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	10A
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		130

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