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NTE160 PNP Transistor

The NTE160 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NTE160 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NTE160 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NTE160 transistor as follows.

Circuit diagram symbol of the NTE160 transistor

NTE160 Transistor Specification

Transistor Code NTE160
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Collector Power Dissipation (Maximum) PC 0.06W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.01A
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 700MHz

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